tm december 2007 fdp5n50 / FDPF5N50 n-channel mosfet ?2007 fairchild semiconductor corporation fdp5n50 / FDPF5N50 rev. a www.fairchildsemi.com 1 unifet tm fdp5n50 / FDPF5N50 n-channel mosfet 500v, 5a, 1.4 features ?r ds(on) = 1.15 ( typ.)@ v gs = 10v, i d = 2.5a ? low gate charge ( typ. 11nc) ? low c rss ( typ. 5pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? rohs compliant description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has be en especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high en ergy pluse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power suppliesand active power factor correction. d g s to-220f fdpf series g s d to-220 fdp series g d s mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter fdp5n50 FDPF5N50 units v dss drain to source voltage 500 v v gss gate to source voltage 30 v i d drain current -continuous (t c = 25 o c) 5 5* a -continuous (t c = 100 o c) 3 3* i dm drain current - pulsed (note 1) 20 20* a e as single pulsed avalanche energy (note 2) 225 mj i ar avalanche current (note 1) 5 a e ar repetitive avalanche energy (note 1) 8.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 o c) 85 28 w - derate above 25 o c 0.67 0.22 w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter fdp5n50 FDPF5N50 units r jc thermal resistance, junction to case 1.4 4.5 o c/w r cs thermal resistance, case to sink typ. 0.5 - r ja thermal resistance, junction to ambient 62.5 62.5 *drain current limited by maximum junction temperature
fdp5n50 / FDPF5N50 n-channel mosfet fdp5n50 / FDPF5N50 rev. a www.fairchildsemi.com 2 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fdp5n50 fdp5n50 to-220 - - 50 FDPF5N50 FDPF5N50 to-220f - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t j = 25 o c 500 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.6-v/ o c i dss zero gate voltage drain current v ds = 500v, v gs = 0v - - 1 a v ds = 400v, t c = 125 o c--10 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a3.0-5.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 2.5a - 1.15 1.4 g fs forward transconductance v ds = 20v, i d = 2.5a (note 4) -4.3-s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 480 640 pf c oss output capacitance - 66 88 pf c rss reverse transfer capacitance - 5 8 pf q g(tot) total gate charge at 10v v ds = 400v, i d = 5a v gs = 10v (note 4, 5) -1115nc q gs gate to source gate charge - 3 - nc q gd gate to drain ?miller? charge - 5 - nc t d(on) turn-on delay time v dd = 250v, i d = 5a r g = 25 (note 4, 5) -1336ns t r turn-on rise time - 22 54 ns t d(off) turn-off delay time - 28 66 ns t f turn-off fall time - 20 50 ns i s maximum continuous drain to source diode forward current - - 5 a i sm maximum pulsed drain to source diode forward current - - 20 a v sd drain to source diode forward voltage v gs = 0v, i sd = 5a - - 1.4 v t rr reverse recovery time v gs = 0v, i sd = 5a di f /dt = 100a/ s (note 4) - 300 - ns q rr reverse recovery charge - 1.8 - c notes: 1: repetitive rating: pulse width limi ted by maximum junction temperature 2: l = 18mh, i as = 5a, v dd = 50v, r g = 25 , starting t j = 25c 3: i sd 5a, di/dt 200a/ s, v dd bv dss , starting t j = 25c 4: pulse test: pulse width 300 s, duty cycle 2% 5: essentially independent of operating temperature typical characteristics
fdp5n50 / FDPF5N50 n-channel mosfet fdp5n50 / FDPF5N50 rev. a www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 0.1 1 10 30 0.04 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0v 10.0v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v i d ,drain current[a] v ds ,drain-source voltage[v] 20 45678 0.1 1 10 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 20 036912 1.0 1.5 2.0 2.5 3.0 *note: t j = 25 o c v gs = 20v v gs = 10v r ds(on) [ ] , drain-source on-resistance i d , drain current [a] 0.40.81.21.6 1 10 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 70 0.1 1 10 0 250 500 750 1000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 30 04812 0 2 4 6 8 10 *note: i d = 5a v ds = 100v v ds = 250v v ds = 400v v gs , gate-source voltage [v] q g , total gate charge [nc]
fdp5n50 / FDPF5N50 n-channel mosfet fdp5n50 / FDPF5N50 rev. a www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum safe operating area - fdp5n50 - FDPF5N50 figure 11. maximum drain current vs. case temperature -75 -25 25 75 125 175 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -75 -25 25 75 125 175 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 2.5a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 110100 0.01 0.1 1 10 800 30 30 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 110100 0.01 0.1 1 10 800 30 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 30 25 50 75 100 125 150 0 1 2 3 4 5 6 i d , drain current [a] t c , case temperature [ o c ]
fdp5n50 / FDPF5N50 n-channel mosfet fdp5n50 / FDPF5N50 rev. a www.fairchildsemi.com 5 typical performance characteristics (continued) figure 12. transient thermal response curve - fdp5n50 figure 13. transient thermal response curve - FDPF5N50 t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 1.4 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] 3 t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 10 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 4.5 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
fdp5n50 / FDPF5N50 n-channel mosfet fdp5n50 / FDPF5N50 rev. a www.fairchildsemi.com 6 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
fdp5n50 / FDPF5N50 n-channel mosfet fdp5n50 / FDPF5N50 rev. a www.fairchildsemi.com 7 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard v oltage d rop v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard v oltage d rop v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- d = g ate p ulse w idth g ate pulse period --------------------------
fdp5n50 / FDPF5N50 n-channel mosfet fdp5n50 / FDPF5N50 rev. a www.fairchildsemi.com 8 mechanical dimensions to-220
fdp5n50 / FDPF5N50 n-channel mosfet fdp5n50 / FDPF5N50 rev. a www.fairchildsemi.com 9 mechanical dimensions to-220f (7.00) (0.70) max1.47 (30 ) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 ?3.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?0.05 dimensions in millimeters
fdp5n50 / FDPF5N50 n-channel mosfet fdp5n50 / FDPF5N50 rev. a www.fairchildsemi.com 10 rev. i32 trademarks the following are registered and unregistered trademarks and service marks fairchild semi conductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. * ezswitch? and flashwriter ? are trademarks of system general corporati on, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make chan ges without notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit descri bed herein; neither does it convey any license under its patent rights, nor the rights of others. these spec ifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically th e warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express wr itten approval of fairchild semiconductor corporation. as used herein: 1. life support devices or s ystems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failur e to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? crossvolt ? ctl? current transfer logic? ecospark ? ezswitch? * ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? flashwriter ? * fps? frfet ? global power resource sm green fps? green fps? e-series? gto? i-lo ? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motion-spm? optologic ? optoplanar ? ? pdp-spm? power220 ? power247 ? poweredge ? power-spm? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? ? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? ultra frfet? unifet? vcx? ? tm tm datasheet identification product status definition advance information formative or in design this datasheet contains the design s pecifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminar y data; supplementary data will be pub- lished at a later date. fairchild semic onductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains specificati ons on a product that has been discontin- ued by fairchild semiconductor. the datasheet is printed for reference infor- mation only.
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